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Abstract The symmetry breaking in octahedral silsesquioxane and its germanium analogues (Si₈O₁₂H₈and Ge₈O₁₂H₈) has been investigated using the M06-2X/6-31++G(3df, 3pd) method and group theory. Both structures undergo$${O}_{h}\downarrow {T}_{h}$$symmetry breaking, characterized by pseudo-Jahn−Teller stabilization energies of 0.22 kcal/mol for Si-POSS and 9.82 kcal/mol for Ge-POSS. Under the influence of the pseudo-Jahn–Teller effect, the distortion vector involves the vibrational a_2gmode with imaginary frequency. The distortion forces in O_h-POSS are predominantly localized on the oxygen atoms and driven by the coupling between the lowest unoccupied molecular orbital (a_1g) and the highest occupied molecular orbital (a_2g). The symmetry breaking is attributed to a pseudo-Jahn–Teller mechanism of type (a_2gx a_1g) = a_2g. The symmetrical substitution of oxygen atoms by X (where X = C, N, P) results in viable T_h-Si₈X₁₂H₈and T_h-Ge₈X₁₂H₈structures. The observed pseudo-Jahn–Teller distortion and substitutional symmetry breaking caused by X indicates a consistent electronic relaxation mechanism, characterized by the formation of C=C, N=N and P=P bonds on the POSS cubic faces, which serves as hallmarks of stability. Additionally, we find that the volume of substituted T_h-symmetrical POSS is sufficiently large to accommodate small ions.